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| triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 1 k-band packaged power amplifier TGA4525-SM key features and performance ? 17ghz - 27ghz bandwidth ? 22 db typical gain ? 37 dbm typical otoi ? 29 dbm typical p1db ? vd = 7v, id = 760ma (id = 830ma @ p1db) ? package dimensions: 5.0 x 5.0 x 1.10 mm measured performance vd = 7v, id = 760ma primary applications ? point-to-point radio ? k-band sat com ? point-to-multipoint communications product description the triquint TGA4525-SM is a packaged high power amplifier for k-band applications. the part is designed using triquints proven standard 0.25 m m gate power phemt production process. the TGA4525-SM provides a nominal 29dbm output power at 1db gain compression with a small signal gain of 22db. the part is ideally suited for low cost emerging markets such as k-band satellite communications, point-to-point & point-to- multipoint communications. evaluation boards are available upon request. lead-free & rohs compliant. note: this device is early in the characterization process prior to finalizing all electrical test specifications. specificati ons are subject to change without notice. -20 -15 -10 -5 0 5 10 15 20 25 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) sparameters (db) gain irl orl 20 22 24 26 28 30 32 34 36 38 40 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) p1db & otoi (dbm) p1db otoi
triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 2 TGA4525-SM table i maximum ratings 1/ symbol parameter value notes vd drain supply voltage 8 v 2/ id drain supply current (quiescent) 880 ma 2/ vg gate voltage range -5 to 0 v | ig | gate supply current 28 ma p in input continuous wave power 26 dbm 2/ p d power dissipation 5.3 w 2/ 3 / t ch operating channel temperature 150 0 c4/ t m mounting temperature (10 seconds) 260 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maximum operable values for this device 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d at a package base temperature of 70 c 3/ when operated at this bias condition with a baseplate temperature of 70 c, the mttf is reduced to 1.0e+6 hours 4/ junction operating temperature will directly affect the device median time to failure (mttf). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. table ii thermal information parameter test conditions t ch ( q c) r 4 jc ( q c/w) mttf (hrs) r q jc thermal resistance (channel to backside of package) vd = 7v id = 760ma p diss = 5.3w t base = 70 c 150 15.1 1e+6 note: thermal transfer is conducted through the bottom of the TGA4525-SM package into the motherboard. the motherboard must be designed to assure adequate thermal transfer to the base plate. triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 3 table iii rf characterization table (t a = 25 q c, nominal) (vd = 7v, id = 760ma r 5%) symbol parameter test conditions typ units gain small signal gain f = 17 C 27 ghz 22 db irl input return loss f = 17 C 27 ghz -8 db orl output return loss f = 17 C 27 ghz -10 db p1db output power @ 1db gain compression f = 17 C 27 ghz 29 dbm psat saturated power f = 17 C 27 ghz 31 dbm otoi output third order intercept @ pin = -10dbm f = 17 C 27 ghz 37 dbm small signal gain temperature coefficient f = 17 C 27 ghz 0.04 db/ 0 c c TGA4525-SM triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 4 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency (ghz) return loss (db) irl orl 0 2 4 6 8 10 12 14 16 18 20 22 24 26 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 frequency (ghz) gain (db) 5v 6v 7v 8v measured performance TGA4525-SM vd = 7v, id = 760ma vd = 5 - 8v, id = 760ma triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 5 measured performance TGA4525-SM 22 23 24 25 26 27 28 29 30 31 32 33 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) saturated power @ pin = 18dbm (dbm) 5v 6v 7v 8v 22 23 24 25 26 27 28 29 30 31 32 33 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) output power (dbm) p1db psat vd = 5 - 8v, id = 760ma vd = 7v, id = 760ma triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 6 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20 pin (dbm) pout (dbm) & gain (db) 700 720 740 760 780 800 820 840 860 880 900 920 940 960 980 1000 id (ma) pout gain id measured performance vd = 7v, id = 760ma TGA4525-SM @ 20 ghz 30 31 32 33 34 35 36 37 38 39 40 16 17 18 19 20 21 22 23 24 25 26 27 28 frequency (ghz) average otoi (dbm) triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 7 31 32 33 34 35 36 37 38 39 40 41 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 output power/tone (dbm) otoi (dbm) 17ghz 19ghz 23ghz 25ghz TGA4525-SM measured performance vd = 7v, id = 760ma -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 5 6 7 8 9 1011121314151617181920 output power/tone (dbm) imd3 (dbm) 17ghz 19ghz 23ghz 25ghz triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 8 description pin number rf input 4 rf output 21 vd 14, 26 vg 10, 30 ground 1, 8, 9, 16, 17, 24, 25, 32, 33* n/c 2, 3, 5, 6, 7, 11, 12, 13, 15, 18, 19, 20, 22, 23, 27, 28, 29, 31 package pinout TGA4525-SM * center pad is used for ground as well as heat dissipation of the part. bottom view triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 9 mechanical drawing TGA4525-SM units: mm tolerances: 0.076 unless specified bottom view triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 10 TGA4525-SM characterization board 0.086 0.010 0.032 vg vd vg vd 100pf 100pf 100pf 100pf 1uf 1uf 1uf 1uf rf in rf out (one side optional) (one side optional) triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 11 application circuit TGA4525-SM vd = 5 to 7v vg = -0.55v typical to get id = 760ma TGA4525-SM 100pf 1 f 100pf 1f 1f 100pf 1f 100pf vg vg vd vd rf in rf out vg (one side optional) vg (one side optional) vd vd triquint semiconductor texas phone: (972)994-8465 fax: (972)994 8504 email: info-mmw@tqs.com web: www.triquint.com advance product information july 18, 2006 12 ordering information part package style TGA4525-SM qfn 5x5 surface mount TGA4525-SM recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 C 120 sec @ 140 C 160 c 60 C 180 sec @ 150 C 200 c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 c260 c time within 5 c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 c/sec 4 C 6 c/sec |
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